Education

• 1998. 2 : B.S., Electronic Engnieering, Sungkyunkwan Univ.
  
• 2000. 8 : M.S., Electronic engineering, Information and Communication Univ.

• 2015 : PhD, Korea Advanced Institute of Science and Technology, Daejeon, Korea.

Research area

• Master thesis : RF Noise Modeling of MOSFETs
  

Present

• Samsung Electronics
  
• Department: 삼성전기 중앙연구소 ASIC Lab.

Affiliation

• 2000. 9-currently : RF IC designer at Samsung Electric and Mechanics, Suwon
  
• 2000. 9-current : RF IC designer at Samsung Electric and Mechanics, Suwon